Search results for "Zinc oxide"
showing 10 items of 80 documents
Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns
2007
In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission …
Fluorescence Quenching in Hybrid Solar Cells Based on Electrodeposited ZnO
2013
A study about fluorescence phenomena in hybrid donor-acceptor interfaces based on electrodeposited zinc oxide (e-ZnO) having different architectures is performed. In particular ITO/ZnO/P3HT and ITO/ZnO/P3HT:PCBM are investigated and their photoluminescence responses are compared with those of ITO/P3HT and ITO/P3HT:PCBM. As expected, ITO/ZnO/P3HT:PCBM and ITO/P3HT:PCBM present higher exciton quenching than ITO/ZnO/P3HT and ITO/P3HT respectively. Furthermore, the hybrid configuration ITO/ZnO/P3HT:PCBM displays a higher quenching percentage in a wider wavelength range than ITO/P3HT:PCBM, indicating a better photo-induced charge separation in e-ZnO based hybrid devices.
Study of High-Temperature Behaviour of ZnO by Ab Initio Molecular Dynamics Simulations and X-ray Absorption Spectroscopy
2021
Wurtzite-type zinc oxide (w-ZnO) is a widely used material with a pronounced structural anisotropy along the c axis, which affects its lattice dynamics and represents a difficulty for its accurate description using classical models of interatomic interactions. In this study, ab initio molecular dynamics (AIMD) was employed to simulate a bulk w-ZnO phase in the NpT ensemble in the high-temperature range from 300 K to 1200 K. The results of the simulations were validated by comparison with the experimental Zn K-edge extended X-ray absorption fine structure (EXAFS) spectra and known diffraction data. AIMD NpT simulations reproduced well the thermal expansion of the lattice, and the pronounced …
Low-cost high-haze films based on ZnO nanorods for light scattering in thin c-Si solar cells
2015
Light scattering from ZnO nanorods (NR) is investigated, modeled, and applied to a solar cell. ZnO NR (120-1300 nm long, 280-60 nm large), grown by low-cost chemical bath deposition at 90 degrees C, exhibit diffused-to-total transmitted light as high as 70% and 30% in the 400 and 1000 nm wavelength range, respectively. Data and scattering simulation show that ZnO NR length plays a crucial role in light diffusion effect. A transparent ZnO NR film grown on glass and placed on top of a 1 mu m thick c-Si solar cell is shown to enhance the light-current conversion efficiency for wavelengths longer than 600 nm. (C) 2015 AIP Publishing LLC.
Radioluminescence, thermoluminescence and dosimetric properties of ZnO ceramics
2017
The authors gratefully acknowledge the financial support for this work from research grant ERA.NET RUS Plus Nr.609556 and from the SFERA II project Transnational Access activities (EU 7th Framework Programme Grant Agreement no 312643) for supporting ZnO nanopowders preparation.
Intraorifice sealing ability of different materials in endodontically treated teeth.
2010
Objectives To evaluate Cavit TM G, ProRoot TM MTA and Tetric® EvoFlow as intraorifice barriers to prevent coronal microleakage in root canal treatment. Study design Forty-two human single rooted teeth were divided randomly in three experimental groups of 10 specimens each and two control groups. The experimental groups were prepared with hand instrumentation and cold lateral condensed technique of the gutta-percha. Four millimetres of coronal gutta-percha were removed and replaced by one of the following filling materials: Cavit TM G, Tetric® EvoFlow or ProRoot TM MTA. In the experimental groups, leakage was measured by the concentration of leaked glucose in the apical reservoir at 1, 7, 30…
Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films
2017
Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these techniques with examples of common ALD materials: Al2O3, ZnO and TiO2. As an example of limitations of the thermal ALD the nucleation and growth of Al2O3 and ZnO films on different grades of poly(methyl methacrylate) (PMMA) are presented, showing that the initiation of the growth is strongly dependent on both the deposited material and the substrate. A potential application of the ALD ZnO films in polymer surface functionalization is demonstrated by changing in the surface wettab…
Cellulose-inorganic hybrids of strongly reduced thermal conductivity
2022
Abstract The employment of atomic layer deposition and spin coating techniques for preparing inorganic-organic hybrid multilayer structures of alternating ZnO-CNC layers was explored in this study. Helium ion microscopy and X-ray reflectivity showed the superlattice formation for the nanolaminate structures and atomic force microscopy established the efficient control of the CNCs surface coverage on the Al-doped ΖnO by manipulating the concentration of the spin coating solution. Thickness characterization of the hybrid structures was performed via both ellipsometry and X-ray reflectivity and the thermal conductivity was examined by time domain thermoreflectance technique. It appears that ev…
Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate
2013
We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at…
Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition
2015
ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). T…